TLVD4200 www.vishay.com vishay semiconductors rev. 2.0, 27-jan-15 1 document number: 83058 for technical ques tions, contact: led@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dh backlighting led in ? 3 mm tinted non-diffused package description the TLVD4200 serie was develope d for backlighting in the extrem bright double heteroju nction (dh) red gaalas on gaas technology. due to its special shape the spatial distribution of the radiation is qualified for backlighting. to optimize the brightness of backlighting a custom-built reflector (with scattering) is required. uniform illumination can be enhanced by covering th e front of the reflector with diffusor material. this is a bright and flexible so lution for backlighting different areas. product group and package data ? product group: led ? package: 3 mm backlighting ? product series: standard ? angle of half intensity: 85 features ? high brightness ? wide viewing angle ? categorized for luminous flux ? available in dh red ? tinted clear package ? low power dissipation ? low self heating ? rugged design ? high reliability ? material categorization: fo r definitions of compliance please see www.vishay.com/doc?99912 applications ? backlighting of display pane ls, lcd displays, symbols on switches, keyboards, graphic boards, and measuring scales ? illumination of large area s e.g. dot matrix displays 19231 parts table part color luminous flux (mlm) at i f (ma) wavelength (nm) at i f (ma) forward voltage (v) at i f (ma) technology min. typ. max. min. typ. max. min. typ. max. TLVD4200 red 40 130 - 15 - 640 - 10 - 1.8 2.2 20 gaaias on gaas TLVD4200-msz red 40 130 - 15 - 640 - 10 - 1.8 2.2 20 gaaias on gaas absolute maximum ratings (t amb = 25 c, unless otherwise specified) TLVD4200 parameter test condition symbol value unit reverse voltage v r 6v dc forward current i f 50 ma surge forward current t p 10s i fsm 1a power dissi pation t amb 60 c p v 100 mw junction temperature t j 100 c operating temperature range t amb -40 to +100 c storage temperature range t stg -55 to +100 c soldering temperature t 5 s, 2 mm from body t sd 260 c thermal resistance junction/ambient r thja 400 k/w
TLVD4200 www.vishay.com vishay semiconductors rev. 2.0, 27-jan-15 2 document number: 83058 for technical ques tions, contact: led@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note ? luminous flux is tested at a current pulse duration of 25 ms. the above type numbers represent the order groups which include only a few brightness groups. only one group will be shipped on each bag (there will be no mixing of two gr oups in each bag). in order to ensure availabi lity, single brightness grou ps will not be orderable. in a similar manner for colors where wavelength groups are measured and binned, single wavelength groups will be shipped on any one bag. in order to ensure availabi lity, single wavelength grou ps will not be orderable. typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - forward current vs. ambient temperature fig. 2 - forward current vs. pulse length optical and electrical characteristics (t amb = 25 c, unless otherwise specified) TLVD4200, red parameter test condition symbol min. typ. max. unit luminous flux i f = 15 ma v 40 130 - mlm dominant wavelength i f = 10 ma d - 640 - nm peak wavelength i f = 10 ma p - 650 - nm angle of half intensity i f = 10 ma ? - 85- deg forward voltage i f = 20 ma v f -1.82.2v reverse voltage i r = 10 av r 615- v junction capacitance v r = 0 v, f = 1 mhz c j -50-pf luminous flux classification group luminous flux (mlm) standard min. max. u4080 v 63 125 w 100 200 x 130 260 y 180 360 z 240 480 0 10 20 30 40 60 i f - forward current (ma) t amb - ambient temperature (c) 95 10095 50 020406080100 0.02 0.05 0.1 0.2 1 0.5 t p /t= 0.01 t amb 65 c 0.01 0.1 1 10 1 10 100 1000 10 000 t p - pulse length (ms) 100 95 10047 i - forward current (ma) f
TLVD4200 www.vishay.com vishay semiconductors rev. 2.0, 27-jan-15 3 document number: 83058 for technical ques tions, contact: led@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 3 - forward current vs. forward voltage fig. 4 - relative luminous flux vs. ambient temperature fig. 5 - relative luminous flux vs. forward current / duty cycle fig. 6 - relative luminous flux vs. forward current fig. 7 - relative intensity vs. wavelength fig. 8 - relative luminous intensity vs. angular displacement for 90 emission angle 1 10 100 95 10014 1 1.5 2 2.5 3 i f - forward current (ma) v f - forward voltage (v) red 0 96 11605 20 40 60 80 100 t amb - ambient temperature (c) 0 0.4 0.8 1.2 1.6 2.0 red v rel - relative luminous flux 10 20 50 100 200 0 0.4 0.8 1.2 1.6 2.4 96 11606 500 0.5 0.2 0.1 0.05 0.02 1 i f (ma) t p /t 2.0 red i fav = 10 ma, const. v rel - relativeluminous flux 0.1 1 10 0.01 0.1 1 10 100 96 11607 i f - forward current (ma) red v rel - relative luminous flux 600 620 640 660 680 0 0.2 0.4 0.6 0.8 1.2 700 95 10018 i rel - relative luminous intensity - wavelength (nm) 1.0 red 96 11608 i v rel - relative luminous intensity 0.4 0.2 0 0.2 0.4 0.6 0.6 0 30 10 20 40 50 60 70 80 0.8 1.0 0.8 1.0
TLVD4200 www.vishay.com vishay semiconductors rev. 2.0, 27-jan-15 4 document number: 83058 for technical ques tions, contact: led@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters ammopack fig. 9 - tape direction note ? the new nomenclature for ammopack is e.g. asz only, without suffix for the led orientation. the carton box has to be turned to the desired position: + for anode first, or - for cathode first. as12z and as21z are still valid for already existing types, but not for new design. ? 3.4 0.15 ? 2.95 0.1 0.4 + 0.15 - 0.05 < 0.6 2.4 0.1 3.2 0.3 4.6 0.3 33.08 0.5 1.5 0.5 2.54 nom. a c area not plane (1.3) technical drawing s according to din s pecification s drawing-no.: 6.544-5226.01-4 i ss ue: 2; 28.07.14 0.5 + 0.2 - 0.1 tape feed direction diodes: cathode before anode transistors: collector before emitter label tape feed direction 94 8667-2 diodes: anode before cathode transistors: emitter before collecto r
TLVD4200 www.vishay.com vishay semiconductors rev. 2.0, 27-jan-15 5 document number: 83058 for technical ques tions, contact: led@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 tape dimensions in millimeters option dim. h 0.5 mm ms 25.5 reel (mat. - no. 1764) quantity per: 2000 94 8171 0.3 0.2 2.54 + 0.6 - 0.1 12.7 0.2 5.08 0.7 18 + 1 - 0.5 9 0.5 measure limit over 20 index-holes: 1 12 0.3 0.9 max. 6.35 0.7 ? 4 0.2 12.7 1 1 ?h? 2
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